| PART |
Description |
Maker |
| IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
(IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| 62WV5128ALL IS62WV5128ALL-70T2 IS62WV5128ALL-70T2I |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IS62WV5128CLL |
512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| BS616UV8020BI BS616UV8020 BS616UV8020BC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
|
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| 79LV2040RPFE-20 79LV2040RPFH-20 79LV2040RPFK-20 79 |
20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM 512K X 40 EEPROM 3V, 250 ns, PDFP100
|
Maxwell Technologies, Inc
|
| GLT6400L08SL-85ST GLT6400L08SLI-85ST GLT6400L08 GL |
Ultra Low Power 512k x 8 CMOS SRAM
|
List of Unclassifed Manufacturers
ETC
|
| AT27LV040A AT27LV040A-12 AT27LV040A-12JC AT27LV040 |
4 Megabit 512K x 8 Low Voltage OTP CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32
High Speed CMOS Triple 2-Channel Analog Multiplexers/Demultiplexers 16-SOIC -55 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| NCV8703MX30TCG NCV8703MX18TCG NCV8703MX28TCG NCV87 |
300 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, LDO Voltage Regulator
|
ON Semiconductor
|
